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Amitabh Joshi Anuranjan Anand Balasubramanian Sundaram Bani Kanta Sarma Bivas Saha 
C. P. Rajendran C.N.R Rao C.N.R Rao Chandrabhas Narayana Diwakar S. Venkatesan 
Eswaramoorthy MG.U. Kulkarni Ganesh Subramanian Govindaraju T H Ila 
Hemalatha Balaram James P. Clement Chelliah Jayanta Haldar K. B. Sinha K.S. Narayan 
Kanishka Biswas Kaustuv Sanyal Kavita Jain Krishnan V.Kundu Tapas K.
Kushagra Bansal M. R. S. Rao Maneesha Inamdar Meheboob Alam Meher K. Prakash 
Namita Surolia Narasimha Roddam Premkumar Senguttuvan Rajesh Ganapathy Ranjan Datta 
Ranjani Viswanatha Ravi Manjithaya S. N. Bhat Santosh Ansumali Santosh Ansumali 
Sarit S. Agasti Sebastian C Peter Sheeba Vasu Shivaprasad S. M.Shobhana Narasimhan 
Sreenivas K. R.Sridhar Rajaram Srikanth Sastry Subi Jacob George Subir K. Das 
Sundaresan A.Swapan Pati Tapas Kumar Maji Udaykumar Ranga Umesh V. Waghmare 
Valdiya K. S.Vidhyadhiraja N. S.Vidya T. N. C. 

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  1. kumar,P, Kuyyalli, J, Kumar, M and Shivaprasad, S. M, A superstructural 2D-phase diagram for Ga on the Si(111)-7x7 system, Sol. State Commun. 151, 1758 - 1760 (2011).

  2. Kesaria, M and Shivaprasad, S. M, Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001), Appl. Phys. Lett. 99, 143105 - 143109 (2011).

  3. Kesaria, M, Shetty, S and Shivaprasad, S. M, Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on bare C-Plane Sapphire, Crystal Growth & Design 11, 4900 - 4904 (2011).

  4. Kesaria, M, Shetty, S and Shivaprasad, S. M, Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire, Materials Research Bulletin 46, 1811 - 1814 (2011).

  5. Praveen Kumar, M. Kumar, B. R. Mehta and S. M. Shivaprasad, Ga-induced restructuring of Si(5 5 12) − 2 × 1 reconstructed surface at room temperature, Surface Science 605, 1426 - 1430 (2011).

  6. Jithesh K, Malleswararao tangi and S. M. Shivaprasad, Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001), J. Appl. Physics 109, 093513 - 093517 (2011).

  7. Praveen Kumar, M. Kumar, Govind, B. R. Mehta and S. M. Shivaprasad, Adsorption kinetics of low-dimensional Ga structures on Si(5 5 12)-2x1 trenched  templates, International Journal of Nanoscience 1-2, 117 - 120 (2011).

  8. M. Kesaria, S. Shetty and S. M. Shivaprasad, Spontaneous formation of GaN nanostructures by molecular beam epitaxy, Journal of Crystal Growth 326, 191 - 194 (2011).

  9. Konstantin N. Galkin, M. Kumar, S.M. Shivaprasad and Nikolay G. Galkin, The model of the magnesium silicide phase (2/3√3×2/3√3)-R30° on Si(111), Physics Procedia 11, 47 - 50 (2011).

  10. Konstantin N. Galkin, M. Kumar, S.M. Shivaprasad and Nikolay G. Galkin, AES and EELS study of desorption of magnesium silicide films on Si(111), Physics Procedia 11, 51 - 53 (2011).

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